Doping of Active Region in Long Wavelength InP-Based Transistor Lasers
The effects of doping in the multiquantum well (MQW) active region on the Liquid Eyeliner properties of InP-based long wavelength deep ridge transistor lasers (TLs) are numerically studied.Doping in the MQWs is shown to lead to a decrease of the slope efficiency and a notable increase of the current gain of the TLs, which makes MQW doping a useful